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| Bulletin I0125J 07/97 IR180LM..CS05CB SERIES FAST RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 180 mils 4" 1000 and 1200 V Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1350 mV Test Conditions TJ = 25C, IF = 20 A (1) 1000 and 1200 V TJ = 25C, IRRM = 100 A (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 180 x 180 mils (4.57x4.57 mm) - see drawing 100 mm, with std. < 110 > flat 260 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180LM..CS05CB Series Bulletin I0125J 07/97 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 8 International Rectifier Device Chip Dimension in Mils 180 2 L 3 M 4 12 5 C 6 S05 7 CB 8 Type of Device: L = Wire Bondable Fast Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) Fast Recovery Type: S05 = 500 nsec CB = Probed Uncut Die (wafer in box) Available Class 10 = 1000 V 12 = 1200 V None = Probed Die in chip carrier Outline Table All dimensions are in microns 2 www.irf.com IR180LM..CS05CB Series Bulletin I0125J 07/97 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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